M. Dioktyanto, D. Aryanto, A. Noviyanto, A.H. Yuwono, N.T. Rochman

Enhancing the density of silicon carbide with the addition of nitrate-based additives

J. Min. Metall. Sect. B-Metall., 58 (3) (2022) 389-395. DOI:10.2298/JMMB220215020D
Full text (pdf)

Export manuscript information:
RIS Format (EndNote, Reference Manager), BibTeX
Available online 04 October 2022
(Received 15 February 2022; Accepted 09 August 2022)


Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750 °C for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while in the oxide form it was 85.0 and 96.0%, respectively. In fact, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110 °C, however, the addition of the nitrate form of MgO-Y2O3 greatly enhanced the densification. The sintering mechanism in the nitrate-based additive is liquid phase sintering, identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering.

Keywords: Silicon carbide; Nitrate; Oxide; Sintering additive; Density

Correspondence Address:
A. Noviyanto (b,d), A.H. Yuwono (a),
a Universitas Indonesia, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Kampus UI Depok, Indonesia; b Nano Center Indonesia, Jl. PUSPIPTEK, Tangerang Selatan, Indonesia; d Mercu Buana University, Department of Mechanical Engineering, Jl. Meruya Selatan, Kebun Jeruk, Indonesia;
email: a.noviyanto@nano.or.id; ahyuwono@eng.ui.ac.id;



Creative Commons License
This work is licensed under a
Creative Commons Attribution-
ShareAlike 4.0 International License